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SIMS imaging: Apparatus and applications |
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| Authors: | Tolstogouzov Alexander B. Kitaeva Tatyana I. Volkov Stepan S. |
| Affiliation: | (1) Scientific Research and Technology Institute (NITI), 11 Yablochkov pas., 390011 Ryazan, Russia |
| Abstract: | Apparatus, software and methods were developed for a microbeam analysis of semiconductor structures or devices based on Si and GaAs with secondary ion mass spectrometry. Semiquantitative analysis methods were based on measuring the relative elemental sensitivity factors. As examples of apparatus and methods applications investigations of various semiconductor materials and devices are described. |
| Keywords: | ion microbeam analysis secondary ion mass spectrometry ion image image depth profilig relative elemental sensitivity factor |
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