Effects of oxygen vacancy on adhesion of incoherent metal/oxide interface by first-principles calculations |
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Authors: | Daisuke Matsunaka Yoji Shibutani |
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Affiliation: | a Center for Atomic and Molecular Technologies, Osaka University, Japan b Department of Mechanical Engineering, Osaka University, Japan |
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Abstract: | We investigate effects of oxygen vacancies on adhesion behavior of incoherent Ni/MgO(0 0 1) interface with large misfit, based on the density functional theory. We demonstrate that oxygen vacancies at any local atomic configuration of the incoherent geometry enhance the image-chargelike interaction between the ions in MgO and the ion-induced images in Ni, and stabilize adhesion of the Ni/MgO(0 0 1) interface. The adhesion energy of the defective interface is remarkably larger than that of the perfect interface. We also show that force constants of the adhesive interactions near the oxygen vacancies are comparable to the Ni-Mg bond at the perfect interface. The vacancy-induced enhancement of the image electron accumulation hardly contributes to the interfacial stiffness, while it is reduced by losing the covalent Ni-O interaction due to an ontop oxygen vacancy. |
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Keywords: | Metal/oxide interface Oxygen vacancy Adhesion Density functional theory |
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