Effects of electronic confinement and substrate on the low-temperature growth of Pb islands on Si(1 0 0)-2 × 1 surfaces |
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Authors: | CC Hsu WH Lin YS Ou CS Chang CI Wu |
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Institution: | a Institute of Physics, Academia Sinica, Taipei 115, Taiwan, ROC b Institute of Photonics and Optoelectronics, National Taiwan University, Taipei 106, Taiwan, ROC c Institute of Electrophysics, National Chiao Tung University, Hsinchu 300, Taiwan, ROC |
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Abstract: | The growth of Pb films on the Si(1 0 0)-2 × 1 surface has been investigated at low temperature using scanning tunneling microscopy. Although the orientation of the substrate is (1 0 0), flat-top Pb islands with (1 1 1) surface can be observed. The island thickness is confined within four to nine atomic layers at low coverage. Among these islands, those with a thickness of six layers are most abundant. Quantum-well states in Pb(1 1 1) islands of different thickness are acquired by scanning tunneling spectroscopy. They are found to be identical to those taken on the Pb(1 1 1) islands grown on the Si(1 1 1)7 × 7 surface. Besides Pb(1 1 1) islands, two additional types of Pb islands are formed: rectangular flat-top Pb(1 0 0) islands and rectangular three-dimensional (3D) Pb islands, and both their orientations rotate by 90° from a terrace to the adjacent one. This phenomenon implies that the structures of Pb(1 0 0) and 3D islands are influenced by the Si(1 0 0)-2 × 1 substrate. |
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Keywords: | Pb(1 0 0) thin film Pb(1 1 1) thin film Si(1 1 1) surface Electronic confinement Low-temperature growth STM |
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