Development of an on-line isotope dilution laser ablation inductively coupled plasma mass spectrometry (LA-ICP-MS) method for determination of boron in silicon wafers |
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Authors: | Chao-Kai Yang Po-Hsiang Chi Yuh-Chang Sun Mo-Hsiung Yang |
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Affiliation: | a Department of Chemistry, National Tsing-Hua University, Hsinchu, Taiwan b Forensic Science Center, Taipei City Police Department, Taipei, Taiwan c Department of Biomedical Engineering and Environmental Sciences, National Tsing-Hua University, Hsinchu, Taiwan |
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Abstract: | A method has been developed based on an on-line isotope dilution technique couple with laser ablation/inductively coupled plasma mass spectrometry (LA-ICP-MS), for the determination of boron in p-type silicon wafers. The laser-ablated sample aerosol was mixed on-line with an enriched boron aerosol supplied continuously using a conventional nebulization system. Upon mixing the two aerosol streams, the isotope ratio of boron changed rapidly and was then recorded by the ICP-MS system for subsequent quantification based on the isotope dilution principle. As an on-line solid analysis method, this system accurately quantifies boron concentrations in silicon wafers without the need for an internal or external solid reference standard material. Using this on-line isotope dilution technique, the limit of detection for boron in silicon wafers is 2.8 × 1015 atoms cm−3. The analytical results obtained using this on-line methodology agree well with those obtained using wet chemical digestion methods for the analysis of p-type silicon wafers containing boron concentrations ranging from 1.0 × 1016 to 9.6 × 1018 atoms cm−3. |
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Keywords: | Silicon wafer LA-ICP-MS On-line isotope dilution |
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