原子层沉积过程中腔室内前驱体分布的模拟研究

建立了原子层沉积 (Atomic Layer Deposition,ALD)反应腔室的三维模型,利用ANSYS Fluent软件模拟分析了ALD过程中压强、前驱体脉冲时间、温度等工艺参数变化对前驱体分布的影响。模拟结果表明:反应压强越低,Mg(Cp)₂前驱体分子的扩散系数越高,能更快且更均匀地分布在整个反应腔室之中；前驱体脉冲时间越长,在反应腔室内的分布越均匀；当脉冲时间为250ms时,Mg(Cp)₂在反应腔室内分布基本均匀,反应腔室内各部位的前驱体质量分数基本一致；当脉冲时间为200ms时,H₂O基本均匀分布在反应腔室内。在MgO薄膜的ALD温度窗口内,反应腔室内温度越高,Mg(Cp)₂前驱体分子的扩散效应越强。

Simulation of Precursor Distribution in Chamber During Atomic Layer Deposition

A three-dimensional model of atomic layer deposition (ALD) reaction chamber was established. The influence of process parameters such as pressure, precursor pulse time and temperature on precursor distribution in ALD process was simulated and analyzed by ANSYS Fluent software. The simulation results show that the lower the reaction pressure is, the higher the diffusion coefficient of Mg(Cp)₂ precursor molecule will be. And the longer the precursor pulse time is, the more even the distribution of it in the reaction chamber will be. When the pulse time is 250ms, the distribution of Mg(Cp)₂ in the reaction chamber was basically even, and the mass fraction of the precursor in each part of the reaction chamber was basically the same. When the pulse time is 200ms, H₂O is basically evenly distributed in the reaction chamber. In the ALD temperature window of MgO film, the diffusion effect of Mg(Cp)₂ precursor molecule is stronger with the higher temperature in the reaction chamber.