1.Laboratoire des Matériaux Inorganiques, Université Mohamed Boudiaf,M’Sila,Algeria;2.Université de Kasdi Merbeh,Ouargla,Algeria;3.Laboratoire d’Energétique et d’Electrochimie du Solide,Université Ferhat Abbas,Sétif,Algeria;4.Department of Physics and Astronomy,University of Nigeria,Nsukka,Nigeria
Abstract:
Indium-doped zinc oxide nanorods were electrochemically deposited at low temperature on ITO substrates. The synthesized ZnO-arrayed layers were investigated by using X-ray diffraction, scanning electron microscopy, UV–vis transmittance, electrochemical impedance spectroscopy, and photocurrent spectroscopy. X-ray diffraction analysis demonstrates that the electrodeposited films are crystalline and present the hexagonal Würtzite ZnO phase with preferential (002) orientation. The ZnO films obtained forms aligned hexagonal nanorods, and depending on the increasing In concentration, the surface morphologies of the films are changed. The ln-doped ZnO nanorods (NRs) are well-aligned with the c-axis being perpendicular to the substrates when the ln concentration was between 0 and 2 at.%. of In, the grown films with In contents up to 4 at.%, changes in the optical band gap from 3.31 to 3.39 eV, and the blue shift in the band gap energy was attributed to the Burstein–Moss effect. The effect of In concentration on the photocurrent generated by films shows that the obtained thin films can be used as a photovoltaic material. Changes in the photocurrent response and the electronic disorder were also discussed in the light of In doping. It was found that the carrier density of IZO thin films varied between 1.06?×?1018 and 1.88?×?1018 cm?3 when the In concentration was between 0 and 4 at.%.
