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DNA-based organic-on-inorganic semiconductor Schottky structures |
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| Authors: | Güllü M ankaya Bar&#x; M Biber H zdemir M Güllüce A Türüt |
| Institution: | aDepartment of Physics, Atatürk University, Erzurum, Turkey bDepartment of Chemistry, Atatürk University, Erzurum, Turkey cDepartment of Biology, Atatürk University, Erzurum, Turkey |
| Abstract: | A sandwich device has been fabricated from DNA molecular film by solution processing located between Al and p-type silicon inorganic semiconductor. We have performed the electrical characteristics of the device such as current–voltage (I–V), capacitance–voltage (C–V) and capacitance–frequency (C–f) at room temperature and in dark. The DNA-based structure has showed the rectifying behavior. From its optical absorbance spectrum, it has been seen that DNA has been a semiconductor-like material with wide optical band energy gap of 4.12 eV and resistivity of 1.6 × 1010 Ω cm representing a p-type conductivity. |
| Keywords: | Schottky barrier Organic–inorganic contact DNA Organic semiconductor |
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