SiC纳米棒的紫外发光研究

采用聚硅氮烷前驱体在高温常压下热裂解的方法制备了3C-SiC纳米棒，在室温下观察到来自纳米棒的378 nm（33?eV） 强紫外发射. 利用扫描电子显微镜、透射电子显微镜、高分辨透射电子显微镜和X射线衍射对样品的形貌和结构进行表征，观察到在该结构中存在类似6H-SiC结构的三层堆垛层错. 利用室温荧光光谱和室温荧光衰减曲线研究了强紫外发射的产生机理，紫外发射来源于3C-SiC纳米棒中的三层堆垛层错的发光. 关键词： 碳化硅 纳米棒 光致发光

Study of ultraviolet photoluminescence from SiC nanorods

Silicon carbide （SiC） nanorods were synthesized via catalyst-assistant crystallization of amorphous silicon carbonitride. An intensive sharp photoluminescence peak at 378 nm was observed from the SiC nanorods. SEM, TEM, HRTEM and XRD was used to characterize the structure. XRD pattern showed that the nanorods are pure 3C-SiC containing stacking faults. The HRTEM image showed that the stacking faults were threefold stacking faults, which resembled the structure of 6H-SiC. We attribute the emission to these stacking faults, and discussed the emission mechanism.