Charge fractionalization in biased bilayer graphene |
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Authors: | J C Martinez M B A Jalil S G Tan |
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Affiliation: | Information Storage Materials Laboratory, Electrical and Computer Engineering Department, National University of Singapore, 4 Engineering Drive 3, 117576, Singapore. |
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Abstract: | Fractional charge may arise when fermionic zero modes exist in a topological background field. In biased bilayer graphene (BBLG), the bias plays the role of the nontrivial background field. When semi-infinite BBLG with a zigzag edge is used, the dynamics induces an odd number of zero-energy modes, which, together with the conjugation symmetry between positive-?and negative-energy states, are the requisite conditions for fractionalization. Exploiting the trigonal interaction to isolate a given zero-energy mode on the zigzag edge, we consider extended and localized modes (the latter being obtained from a localized wavepacket generated by prior irradiation of the sample with an electromagnetic vortex). The valley degeneracy is lifted by a layer asymmetry, while an edge-induced spin polarization breaks the spin degeneracy. We describe scenarios for the detection of charge-[Formula: see text] edge states. |
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