Conductivity peculiarities in epitaxial layers of cadmium selenide

Electrophysical properties are studied in epitaxial cadmium selenide films produced by condensation on common mica and fluorophlogopite substrates over a wide range of substrate temperatures (T_s). It is shown that under conditions close to equilibrium highly perfect layers are produced with charge carrier mobility up to 300 cm²/V · sec and concentration ～ 10¹⁶ cm^?3. The temperature dependence of carrier concentration and mobility are studied in undoped and doped CdSe films. The values of the intercrystallite energy barriers are determined in layers condensed at differing T_s. It is shown that at T_s>630?C the charge carrier diffusion mechanism is close to that of a monocrystal, while for a barrier diffusion mechansim (T_s<630?C) the character of the energy barriers for the cubic and hexagonal phases in CdSe is somewhat different. Donor-level ionization energy and ionized center concentration are determined.