Thermal and Auger processes in p-n junctions based on GaInAs/InAs and InAsSbP/InAs heterostructures

A study is made of the excess-energy relaxation processes and the mechanisms responsible for overheating of the active zone of infrared emitters made from nonisoperiodic structures with stressed InGaAs layers and from nearly isoperiodic InAsSbP structures and emitting in the wavelength range λ=2.5–5.0 µm are investigated. The relationship between the overheat ΔT of the active zone of the structure and Auger processes is established for In_1?x Ga_xAs infrared emitters. It is shown that the efficiency of Auger recombination decreases as x increases in the interval 0–0.09, promoting a sharp reduction in ΔT. At x>0.09 the efficiency of CHHS Auger processes decreases exponentially, but an increase in the density of dislocations due to the appreciable value (～6.9%) of the lattice mismatch parameter causes ΔT to increase, but slowly.