Orientation selective growth of MgO films on Si (100) by pulsed laser deposition |
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| Authors: | XY Chen KH Wong CL Mak JM Liu XB Yin M Wang ZG Liu |
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| Institution: | (1) Department of Applied Physics, The Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong, HK;(2) National Laboratory of Solid State Microstructures Physics and Department of Materials Science and Engineering, Nanjing University, Nanjing 210093, P.R. China, CN;(3) National Laboratory of Solid State Microstructures Physics and Department of Physics, Nanjing University, Nanjing 210093, P.R. China, CN |
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| Abstract: | Selective growth of single-oriented (110), (100) and (111) MgO films on Si (100) substrates without buffer layers was obtained
via a two-step method by pulsed laser deposition. It was found that the orientation of the films was determined at the initial
deposition stage by the substrate temperature only. The ambient pressure during deposition, the laser fluence and the etching
of the Si substrates have no apparent effect on the orientation of the films, but affect their crystalline quality. Under
the present deposition conditions, the surfaces of all three different single-oriented films were very smooth and devoid of
any particulates.
Received: 23 January 2001 / Accepted: 6 June 2001 / Published online: 2 October 2001 |
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| Keywords: | PACS: 68 55Jk 81 15Fg 81 05Cy |
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