Determination of Nitrogen in Silicon Carbide by Secondary Ion Mass Spectrometry |
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| Authors: | B. Ya. Ber D. Yu. Kazantsev E. V. Kalinina A. P. Kovarskii V. G. Kossov A. Hallen R. R. Yafaev |
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| Affiliation: | (1) Ioffe Physicotechnical Institute, Russian Academy of Sciences, Politekhnicheskaya ul. 26, St. Petersburg, 194021, Russia;(2) Department of Microelectronics and Information Technology, Royal Institute of Technology, Laboratory of Solid State Electronics, Electrum 229, SE-164 40 Kista-Stockholm, Sweden |
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| Abstract: | The emission of atomic and complex nitrogen ions, which are the main impurity determining the n type conduction of silicon carbide, is investigated. It is shown that, among all the secondary ions of the CxN and SixN kind (x = 0, 1, 2, 3), the 26(CN)– fragment exhibits the highest ion yield. The use of an ion peak with a specified mass as an analytical signal provides a detection limit for nitrogen in SiC at a level of 1016 cm–3. This result is attained in measurements at high mass resolution (M/ M = 7500, interference peak 26(13C2)–). |
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