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Electrochemical impedance spectroscopy of ZnO nanostructures |
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| Authors: | Hongqin Liu Gaëlle Piret Brigitte Sieber Jacky Laureyns Pascal Roussel Wenguo Xu Rabah Boukherroub Sabine Szunerits |
| Affiliation: | 1. The Institute for Chemical Physics, School of Science, Beijing Institute of Technology, Beijing, 100081, PR China;2. Institut de Recherche Interdisciplinaire (IRI, USR-3078) and Institut d’Electronique, de Microélectronique et de Nanotechnologie (IEMN, CNRS-8520), Cité Scientifique, Avenue Poincaré – BP 60069, 59652 Villeneuve d’Ascq, France;3. Laboratoire de Structure et Propriétés de l’Etat Solide, UMR CNRS 8008, Université des Sciences et Technologiques de Lille, Bâtiment C6, 59655 Villeneuve d’Ascq, France;4. Laboratoire de Spectrochimie Infrarouge et Raman (LASIR), Bâtiment C5 – UMR CNRS 8516, 59655 Villeneuve d’Ascq, France;5. UCCS, Equipe de Chimie du Solide, UMR CNRS 8181, ENSCL et Université Lille 1, BP 90108, 59652 Villeneuve d’Ascq, France |
| Abstract: | The paper reports on the use of electrochemical impedance spectroscopy to determine the doping character and carrier density of freshly prepared and annealed ZnO nanostructures. The ZnO nanostructures were obtained by chemical oxidation of metallic Zn in a 5% N,N-dimethylformamide (DMF) aqueous solution at 95 °C for 24 h. The as-grown nanostructured ZnO samples display a high donor density of 3.71 ± 0.88 × 1021 cm?3. Annealing at 100 and 200 °C did not have any effect on the donor density while thermal annealing at 300 °C in air for 1 h induced a decrease in the doping concentration without affecting the surface morphology. |
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