InAs/GaSb strained layer superlattice detectors with nBn design |
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Authors: | Elena Plis Stephen Myers Arezou Khoshakhlagh Ha Sul Kim Yagya Sharma Nutan Gautam Ralph Dawson Sanjay Krishna |
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Affiliation: | 1. Center for High Technology Materials, 1313 Goddard Street SE, Albuquerque, NM 87106, United States;2. Advanced Materials Laboratory, 1001 University Blvd. SE, Albuquerque, NM 87106, United States;1. Institute of Applied Physics, Military University of Technology, 2 Urbanowicza Str., 00-908 Warsaw, Poland;2. Vigo System S.A., 129/133 Poznańska Str., 05-850 O?arów Mazowiecki, Poland;3. Graduate Institute of Photonics and Optoelectronics, National Taiwan University, Sec.4, Roosevelt Rd., Taipei 10617, Taiwan;1. Univ. Montpellier, IES, UMR 5214, F-34000 Montpellier, France;2. CNRS, IES, UMR 5214, F-34000 Montpellier, France;3. Univ. Montpellier, L2C, UMR 5221, F-34000 Montpellier, France;4. CNRS, L2C, UMR 5221, F-34000 Montpellier, France;5. ONERA, Chemin de la Hunière, F-91761 Palaiseau, France;1. Thales Research and Technology, 1 Avenue Augustin Fresnel, 91767 Palaiseau, France;2. ONERA, Chemin de la Hunière, 91761 Palaiseau, France;3. Univ. Montpellier, IES, UMR 5214, F-34000 Montpellier, France;4. CNRS, IES, UMR 5214, F-34000 Montpellier, France |
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Abstract: | We have investigated the electrical and optical properties of an nBn based Type-II InAs/GaSb strained layer superlattice detector as a function of absorber region background carrier concentration. Temperature-dependent dark current, responsivity and detectivity were measured. At T = 77 K and Vb = 0.1 V, with two orders of magnitude change in doping concentration, the dark current density increased from ~0.3 mA/cm2 to ~0.3 A/cm2. We attribute this to a depletion region that exists at the AlGaSb barrier and the SLS absorber interface. The device with non-intentionally doped absorption region demonstrated the lowest dark current density (0.3 mA/cm2 at 0.1 V) with a specific detectivity D1 at zero bias equal to 1.2 × 1011 Jones at 77 K. The D1 value decreased to 6 × 1010 cm Hz1/2/W at 150 K. This temperature dependence is significantly different from conventional PIN diodes, in which the D1 decreases by over two orders of magnitude from 77 K to 150 K, making nBn devices a promising alternative for higher operating temperatures. |
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