Fabrication and electrochemical behaviour of vertically aligned boron-doped diamond nanorod forest electrodes |
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| Authors: | Daibing Luo Jinfang Zhi |
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| Institution: | 1. Key Laboratory of Photochemical Conversion and Optoelectronic Materials, Technical Institute of Physics and Chemistry, No. 2, Beiyitiao, Zhong-guan-cun, Haidian District, Beijing 100190, China;2. Graduate University of Chinese Academy of Sciences, No. 2, Beiyitiao, Zhong-guan-cun, Haidian District, Beijing 100190, China |
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| Abstract: | Vertically aligned boron-doped diamond nanorod forests (BDDNF) were successfully fabricated by depositing a diamond film onto silicon nanowires (SiNWs) using hot filament chemical vapor deposition (HFCVD). The boron-doped diamond nanorods were characterized by Raman spectroscopy and scanning electron microscopy (SEM). The BDDNF obtained from the SiNWs on the silicon wafer could be directly used as an electrode and its electrochemical behaviour is discussed here. Compared to a flat boron-doped diamond (BDD) electrode, the BDDNF electrode showed high sensitivity in the amperometric detection of adenine. |
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