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An equivalent circuit model of a novel photodetector
Authors:GZ Zhan  FM Guo  JW Li  ZQ Zhu  JH Chu
Institution:1. University of L’Aquila, Department of Industrial and Information Engineering and Economics, Via G. Gronchi 18, 67100 L’Aquila, Italy;2. University of L’Aquila, Department of Physical and Chemical Sciences, Via Vetoio, 67100 L’Aquila, Italy;1. Department of Chemistry, Catalysis Research Center, Technische Universität München, Ernst-Otto-Fischer-Straße 1, 85748 Garching, Germany;2. Department of Chemistry, Institute of Technical Electrochemisty, Technische Universität München, Lichtenbergstraße 4, 85748 Garching, Germany;3. Department of Energy Conversion and Storage, Technical University of Denmark, Kemitorvet, Building 207, 2800 Kgs. Lyngby, Denmark;1. Young Researchers and Elites Club, Science and Research Branch, Islamic Azad University, Tehran, Iran;2. Plasma Physics Research Center, Science and Research Branch, Islamic Azad University, Tehran, Iran;1. Alexandru Ioan Cuza University of Iasi, Interdisciplinary Research Department and RAMTECH, Blvd. Carol I, Nr. 11, 700506 Iasi, Romania;2. Gheorghe Asachi Technical University of Iasi, Faculty of Automatic Control and Computer Science, Str. Dimitrie Mangeron, Nr. 27, 700050 Iasi, Romania
Abstract:An equivalent circuit model of a novel photodetector (PD) is proposed in this article. We use this model to describe the relation between the bias voltage and current (IV), also the bias voltage and capacitance(CV) of this kind of novel PD. The circuit model could optimize the structure of the circuit and could be linked with the readout circuit. According to the comparison between the simulation result and the experimental result by circuit testing, we could find they are in good agreement, which proving the correctness of the equivalent circuit model. The signification of this equivalent circuit model is to design an optimal readout circuit (ROIC) for the novel PD.
Keywords:
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