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Effect of photoexcited carriers on Raman spectra of a hydrogenated GaAs crystal implanted with silicon |
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| Authors: | V N Denisov B N Mavrin V B Podobedov É M Omel'yanovskii A V Pakhomov A Ya Polyakov |
| Institution: | (1) Institute of Spectroscopy, Academy of Sciences of the USSR, Troitsk |
| Abstract: | Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 53, No. 1, pp. 116–121, July, 1990. |
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