Luminescence of ZnO films implanted with Au+ ions and annealed in oxygen radicals |
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| Authors: | A N Georgobiani A N Gruzintsev V T Volkov A N Pustovit V I Demin V A Dravin I F Gushchin |
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| Institution: | (1) Institute of Microelectronic Technology and High-Purity Materials, Russian Academy of Sciences, Chernogolovka, Moscow Oblast, 142432, Russia |
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| Abstract: | Visible and ultraviolet luminescence spectra of ZnO:Au+ samples with various dose of implanted gold were studied at a temperature of 77 K. Luminescence peaks of bound and free excitons, D-A pairs, and electron recombination to the gold acceptor level were detected. The optical depth (0.117 eV) of the AuZn impurity acceptor level was determined. Diffusive spreading of the implanted impurity profile upon annealing of the zinc oxide film was observed by SIMS. |
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