Nano-probe-assisted technology of indium-nano-dot formation for site-controlled InAs/GaAs quantum dots |
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Authors: | S. Ohkouchi Y. Nakamura H. Nakamura K. Asakawa |
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Affiliation: | The Femtosecond Technology Research Association (FESTA), 5-5 Tokodai, Tsukuba, Ibaraki 300-2635, Japan |
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Abstract: | We have successfully and reproducibly fabricated uniform indium (In) nano-dots at a selected point. Nano-dot formation was realized using an atomic force microscope (AFM) probe with a specially designed cantilever, which was equipped with a hollow pyramidal tip with a sub-micron size aperture on the apex and an In-reservoir tank within the stylus. The In nano-dots formed in this study can be directly converted to InAs quantum dots by subsequent irradiation of arsenic flux in the molecular beam epitaxy chamber, which is connected to the AFM chamber through an ultra-high-vacuum tunnel. |
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Keywords: | Author Keywords: Site-control Quantum dot Atomic force microscope Nano-probe |
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