Scattering by a random field of elastic deformations in neutron-bombarded GaAs

The contribution to electron scattering due to a random field of elastic deformations produced by defects in GaAs caused by neutron irradiation is calculated. Under the assumption of smallness of the radius of correlation of the random field and the parameter values used earlier to interpret the optical absorption spectrum, the influence of this scattering mechanism on the mobility is estimated.Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 6, pp. 51–53, June, 1987.