Stable structure and effects of sulfur in CdTe/CdS heterojunctions |
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Authors: | Jianli Wang Gang Tang XS Wu Mingqiang Gu |
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Institution: | 1. Department of Physics, China University of Mining and Technology, , Xuzhou, 221116 China;2. Nanjing National Laboratory of Microstructures, Laboratory of Solid State Microstructures, Department of Physics, Nanjing University, , Nanjing, 210093 China |
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Abstract: | Structural and electronic properties of S in the CdTe/CdS(0001) interface are studied using the density functional theory. The interstitial S atom may induce the inversion of the surface Cd atoms and sublayer Te atoms of the Cd‐terminated surface, while S atoms may adsorb at the top sites, substitute Te atoms or accumulate at the voids inside the Te‐terminated (111) CdTe surface. Isovalent substituting S for Te in the CdTe(111)/CdS(0001) heterojunctions can reduce the strain arising from lattice mismatch and cause a reduction of interface states, so it may be better for solar cells. Copyright © 2011 John Wiley & Sons, Ltd. |
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Keywords: | S adsorption CdTe(111) CdS(0001) first‐principles calculations |
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