Investigation of organosilicon radicals : I. Methylphenylsilane anion radicals |
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Authors: | J Réffy |
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Institution: | Department of Inorganic Chemistry, Technical University of Budapest, H-1521 Budapest Hungary |
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Abstract: | CNDO/2 calculations with an spd basis set have been carried out on methyl-phenylsilane anion radicals, and the calculated spin density values compared with the experimental hyperfine coupling constants. The CNDO method overestimates the role of d orbitals and the partial charges on hydrogen atoms attached to silicon atom. The partial charge distribution and the carbonsilicon bond order in the anion radicals and the corresponding neutral molecules are discussed. The equilibrium carbonsilicon bond distance in the trimethylphenylsilane molecule and corresponding anion radical have also been investigated. |
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