Self‐formed Schottky barrier induced selector‐less RRAM for cross‐point memory applications |
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| Authors: | Sangsu Park Seungjae Jung Manzar Siddik Minseok Jo Jubong Park Seonghyun Kim Wootae Lee Jungho Shin Daeseok Lee Godeuni Choi Jiyong Woo Euijun Cha Byoung Hun Lee Hyunsang Hwang |
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| Affiliation: | 1. Gwangju Institute of Science and Technology (GIST), Gwangju 500‐712, Republic of Korea;2. Pohang University of Science and Technology (POSTECH), Pohang 790‐784, Republic of Korea |
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| Abstract: | We propose a selector‐less Pr0.7Ca0.3MnO3 (PCMO) based resistive‐switching RAM (RRAM) for high‐density cross‐point memory array applications. First, we investigate the inhomogeneous barrier with an effective barrier height (Φeff), i.e., self‐formed Schottky barrier. In addition, a scalable 4F2 selector‐less cross‐point 1 kb RRAM array has been successfully fabricated, demonstrating set, reset, and read operation for high cell efficiency and high‐density memory applications. (© 2012 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim) |
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| Keywords: | cross‐point memory Schottky barrier Pr0.7Ca0.3MnO3 manganites resistive switching RRAM |
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