Photoluminescence properties of selectively grown InN microcrystals |
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| Authors: | Jumpei Kamimura Katsumi Kishino Akihiko Kikuchi |
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| Institution: | 1. Department of Engineering and Applied Sciences, Sophia University, 7‐1 Kioi‐cho, Chiyoda‐ku, Tokyo 102‐8554, Japan;2. Sophia Nanotechnology Research Center, Sophia University, 7‐1 Kioi‐cho, Chiyoda‐ku, Tokyo 102‐8554, JapanPhone: +81 3 3238 3323, Fax: +81 3 3238 3321;3. Sophia Nanotechnology Research Center, Sophia University, 7‐1 Kioi‐cho, Chiyoda‐ku, Tokyo 102‐8554, Japan |
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| Abstract: | We investigated the photoluminescence (PL) properties of regularly arranged N‐polar InN microcrystals with m ‐plane sidewall facets. We observed narrow PL emission at 0.678 eV with a linewidth of ～14 meV at 4 K and a clear band‐filling effect with increasing excitation power. We also observed a normal red shift of the PL peak energy as large as 51 meV (～150 nm) with increasing temperature from 4 to 300 K, similar to that observed for non‐degenerated semiconductors. The integrated PL intensity ratio I300K/I4K was measured to be 6.1%. These results indicate that InN microcrystals have a low residual carrier density and excellent optical properties without being adversely affected by surface electron accumulation, despite their relatively high surface area. (© 2012 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim) |
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| Keywords: | InN photoluminescence microcrystals selective‐area growth molecular beam epitaxy |
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