On the mechanism of potential‐induced degradation in crystalline silicon solar cells |
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| Authors: | J Bauer V Naumann S Großer C Hagendorf M Schütze O Breitenstein |
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| Institution: | 1. Max Planck Institute of Microstructure Physics, Weinberg 2, 06120 Halle, Germany;2. Fraunhofer Center for Silicon Photovoltaics CSP, Walter‐Hülse‐Str. 1, 06120 Halle, GermanyPhone: +49 345 5589 119, Fax: +49 345 5589 101;3. Fraunhofer Center for Silicon Photovoltaics CSP, Walter‐Hülse‐Str. 1, 06120 Halle, Germany;4. Q‐Cells SE, Sonnenallee 17–21, 06766 Bitterfeld‐Wolfen, Germany |
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| Abstract: | Multicrystalline standard p‐type silicon solar cells, which undergo a potential induced degradation, are investigated by different methods to reveal the cause of the degradation. Microscopic local ohmic shunts are detected by electron‐beam‐induced current measurements, which correlate with the sodium distribution in the nitride layer close to the Si surface imaged by time‐of‐flight secondary ion mass spectroscopy. The results are compatible with a model of the formation of a charge double layer on or in the nitride, which inverts the emitter. (© 2012 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim) |
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| Keywords: | solar cells crystalline silicon potential induced degradation sodium |
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