1. The Key Laboratory for Magnetism and Magnetic Materials of MOE, Department of Physics, School of Physical Science and Technology, Lanzhou University, Lanzhou 730000, P.R. China;2. Quantum Structures Laboratory, Department of Electrical Engineering, University of California, Riverside, CA 92521, USA
Abstract:
Write‐once–read‐many‐times memory (WORM) devices were fabricated using Ti/Au and Au as top contacts on ZnO thin films on Si. Electrical characterization shows that both types of WORM devices have large resistance OFF/ON ratio (R ratio), small resistance distribution range, long retention and good endurance. WORM devices with Au top contact have better performance of higher R ratio because of a larger work function of Au compared to Ti.
