Double resonance Raman effects in InN nanowires |
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| Authors: | N Domènech‐Amador R Cuscó R Calarco T Yamaguchi Y Nanishi L Artús |
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| Institution: | 1. Institut Jaume Almera, Consell Superior d'Investigacions Científiques (CSIC), Lluís Solé i Sabarís s.n., 08028 Barcelona, Catalonia, Spain;2. Institute of Bio‐ and Nanosystems, Research Center Jülich GmbH, 52425 Jülich, Germany;3. Paul‐Drude‐Institut für Festk?rperelektronik, Hausvogteiplatz 5–7, 10117 Berlin, Germany;4. Faculty of Science and Engineering, Ritsumeikan University, 1‐1‐1 Noji‐Higashi, Kusatsu, Shiga 525‐8577, Japan |
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| Abstract: | We study the excitation wavelength dependence of the Raman spectra of InN nanowires. The $ E_1 ({\rm LO})$ phonon mode, which is detected in backscattering configuration because of light entering through lateral faces, exhibits an upward fre‐ quency shift that can be explained by Martin's double resonance. The $ E_1 ({\rm LO})$ /$ E_2^h $ intensity ratio increases with the excitation wavelength more rapidly than the $A_1 ({\rm LO})/E_2^h $ ratio measured in InN thin films. (© 2012 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim) |
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| Keywords: | InN nanowires Raman scattering resonance Raman scattering |
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