Low voltage organic field effect transistors with a poly(hexylthiophene)–ZnO nanoparticles composite as channel material |
| |
| Authors: | Wagner S Machado Ivo A Hümmelgen |
| |
| Institution: | Departamento de Física, Universidade Federal do Paraná, Caixa Postal 19044, 81531‐990 Curitiba, Brazil |
| |
| Abstract: | We report on solution processable organic field effect transistors prepared using a poly(3‐hexylthiophene)–ZnO nanoparticles composite as channel semiconductor material and cross‐linked polyvinyl alcohol as gate insulator. Our transistors show a field effect mobility of 0.35 ± 0.06 cm2/V s, threshold voltage of –1.30 ± 0.11 V, and Ion/Ioff ratio of (1.0 ± 0.1) × 103. (© 2012 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim) |
| |
| Keywords: | OFETs zinc oxide nanoparticles hexylthiophene poly(vinyl alcohol) |
|
|
