Reconstruction-Determined Diffusion of Ag Adatoms on the Si(111)-(7X7) Surface |
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Authors: | P Sobotík I Ošťádal P Kocán J Mysliveček T Jarolímek |
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Institution: | (1) Department of Electronics and Vacuum Physics, Faculty of Mathematics and Physics, Charles University, V Holeovikách 2, 180 00 Praha 8, Czech Republic |
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Abstract: | Surface diffusion is one of the basic processes determining morphology of a growing film. In the case of metal heteroepitaxy on Si(111)-(7X7) the diffusion is strongly affected by the presence of surface reconstruction, which introduces additional constraints into the motion of deposited atoms. To determine diffusion parameters we used two different approaches: i) interpretation of experimentally observed morphologies by a coarse-grained kinetic Monte Carlo model, ii) direct observation of adatom movement using UHV STM. The attempt frequency and the barrier to hopping of a single Ag atom between half-unit cells of the reconstruction were estimated in both cases. Obtained values are compared and discussed. |
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Keywords: | surface diffusion heteroepitaxy silver Si(111)-(7X7) Monte Carlo simulation scanning tunneling microscope |
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