1.2kW C波段固态高效率GaN微波源研制

针对传统大功率Si,GaAs固态微波源效率低和高温度性能差的不足,采用导热系数优良的宽禁带GaN单元功放模块集成、低损耗同轴波导径向空间功率合成方法,研制出一种1.2kW全固态C波段高效率宽禁带GaN微波源。实验结果表明:该方法实现了大功率固态微波源高效率及连续长时间高温风冷散热运行,系统安全可靠。单路功放模块集成6位移相器,移相精度5.6°,增益35dB,输出功率大于31W。系统连续波输出功率1.2kW,总效率30%,谐波抑制-54.8dBc;杂散-63.69dBc,相位噪声-94.03dBc/Hz@1kHz。

Development of 1.2 kW C band solid-state high efficiency GaN microwave source

As the efficiencies of the traditional high power solid state Si microwave source and GaAs microwave source are low and their performances are poor at high temperature, we have developed a 1.2 kW C-band all solid state high efficiency GaN microwave source by using the low loss coaxial waveguide spatial power combining technique which utilizes GaN units power amplifier module integration. The experimental result shows that the efficiency of the GaN microwave source is high and it can safely and reliably operate at high temperature. A single C-band GaN power amplifier module unit integrates a 6-bit phase shifter with a phase shift precision of 5.6, a gain of 35 dB, and an output power greater than 31 W. The continuous output power of the microwave source is 1.2 kW, the total efficiency is 30%, the harmonic suppression is -54.8 dBc, the stray is -63.69 dBc and the phase noise is -94.03 dBc/Hz@1kHz.