Transient-diffusion effects |
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| Authors: | D Stiebel P Pichler |
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| Institution: | (1) Fraunhofer Institute of Integrated Circuits, Device Technology Department, Schottkystrasse 10, 91058 Erlangen, Germany, DE |
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| Abstract: | Transient effects on diffusion and activation during post-implantation anneals are a major obstacle for the further miniaturization
of ultra-large-scale integrated semiconductor devices. The article reviews recent developments in the simulation of such phenomena
with particular emphasis on models for the kinetics of self-interstitial agglomerates and boron–interstitial clusters.
Received: 21 August 2002 / Accepted: 21 August 2002 / Published online: 12 February 2003
RID="*"
ID="*"Corresponding author. Fax: +49-9131/761-212, E-mail: pichler@iis-bfhg.de |
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| Keywords: | PACS: 61 72 Cc 66 30 Jt 85 40 Ry |
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