Temperature dependence of the spectrum of recombination radiation for indium phosphide n-p junctions

The spectrum of the recombination radiation from diffused indium phosphide n-p junctions was investigated at 77, 138, 210, and 298° K. The quantum energy in the maximum of the spectrum of recombination radiation differs from the corresponding energy gap values by 0.01 eV; this phenomenon is related to recombination processes at impurity levels.