| GexSi1—x／Si应变层超晶格的结构特性与器件应用 |
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| 引用本文： | 彭英才.GexSi1—x／Si应变层超晶格的结构特性与器件应用[J].半导体光电,1992,13(4):325-333. |
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| 作者姓名： | 彭英才 |
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| 作者单位： | 河北大学电子与信息工程系 保定 |
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| 摘 要： | 近年来,Ge_xSi_(1-x)/Si 应变层超晶格的研究日渐活跃与成熟。本文试从半导体物理与器件应用的角度出发,着重介绍了这种超晶格的各种结构特性,并简要评述了以 Ge_xSi_(1-x)/Si 异质结形成的各种新型半导体器件的研究进展。
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| 关 键 词： | 超晶格 结构 特性 半导体材料 |
Structure Features and Device Applications of Ge_xSi_(1-x)/Si Strained Layer Superlattice |
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| Peng Yingcai.Structure Features and Device Applications of Ge_xSi_(1-x)/Si Strained Layer Superlattice[J].Semiconductor Optoelectronics,1992,13(4):325-333. |
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| Authors: | Peng Yingcai |
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| Abstract: | The investigation on Ge_xSi_(1-x)/Si strained layer superlattice has been carried out actively in recent years.From the point of view of semiconductor phy- sics and device applications,the article introduces the structure features of this Superlattice,along with a brief survey of research development on various new se- miconductor devices in the form of Ge_xSi_(1-x)/Si heterostructures. |
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| Keywords: | Strained Layer Superlattice Structure Characteristic |
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