Hole capture in SiO2 films after ion implantation

Thermal oxides were implanted with common dopants (As, P) and inert elements (Ar). After different post-implantation annealing treatments the hole trapping in the samples was characterized by means of avalanche injection. Hole capture is reduced by anneal in an oxidizing ambient, but less for As and P than for Ar samples. It is shown that defect centers are produced by chemical interaction between network formers and the damaged oxide structure and in addition by recoil damage.