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Synthesis and crystal structure of an organic semiconductor (ET)4[Hg2I6]
Authors:O. A. D'yachenko  V. V. Gritsenko  G. V. Shilov  R. N. Lyubovskaya  R. B. Lyubovskii
Affiliation:(1) Institute of Chemical Physics in Chernogolovka, Russian Academy of Sciences, Chernogolovka, 142432 Moscow Region, Russian Federation
Abstract:A new cation-radical salt (ET)4[Hg2I6] (1), where ET is bis(ethylenedithio)tetrathiafulvalene, has been synthesized in the system ET-HgI3-PhCl. An X-ray study of 1 (a=41.02(5),b=23.01(1),c=8.233(2) Å,V=7772(3) Å3, space groupPc21b,Z=4,dcalc=2.308 g cm–3) has established its composition, chemical formula, and the main structural features. The ET cation-radicals are packed in the conducting layer, the type of packing is agrPrime; the [Hg2I6]2– anion has a dimeric structure. The temperature dependence of the conductivity of the (ET)4[Hg2I6] crystals (sgr300=6 Ohm–1 cm–1) has a semiconducting character.Translated fromIzvestiya Akademii Nauk. Seriya Khimicheskaya, No. 7, pp. 1240–1244, July, 1994.We thank M. G. Kaplunov for his participation in the discussion of the obtained results.This work was financially supported by the Scientific Council on the Problems of High-Temperature Superconductivity (Grant No. 90346 ldquoMetallorgrdquo) and the Russian Foundation for Basic Research (Project No. 93-02-2384).
Keywords:organic conductors  ion-radical salts  bis(ethylenedithio)tetrathiafulvalene  mercury iodides  crystal structure  electrochemical synthesis
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