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| 透射式蓝延伸GaAs光电阴极光学结构对比 | |
| 引用本文： | 赵静,常本康,张益军,张俊举,石峰,程宏昌,崔东旭.透射式蓝延伸GaAs光电阴极光学结构对比[J].物理学报,2012,61(3):37803-037803. |
| 作者姓名： | 赵静 常本康 张益军 张俊举 石峰 程宏昌 崔东旭 |
| 作者单位： | 1. 南京理工大学电子工程与光电技术学院,南京,210094 2. 微光夜视技术实验室,西安,710065 3. 西安应用光学研究所,西安,710065 |
| 基金项目： | 国家自然科学基金(批准号: 61171042)、江苏省普通高校研究生科研创新计划资助项目 (项目编号:CX09B_096Z)和南京理工大学自主科研专项计划(项目编号:2010ZYTS032)资助的课题. |
| 摘 要： | 用金属有机物化学气相沉积法外延制备了一个透射式蓝延伸GaAs光电阴极,积分灵敏度达到1980 μA/lm,同时与美国ITT公司的一条蓝延伸阴极光谱响应曲线对比,分别对两者进行了光学结构拟合. 结果表明,国内阴极在Ga1-xAlxAs层厚度、Al组分、电子扩散长度和后界面复合速率上与国外 存在差距,这导致国内阴极的蓝延伸性能不及国外.国内蓝延伸阴极的表面电子逸出几率、发射层厚度与 国外阴极拟合结果一致,这使得两者长波响应性能差别远小于短波部分的差别.另外响应波段全谱的吸收率 小于国外阴极,导致国内透射式蓝延伸GaAs光电阴极光谱响应、积分灵敏度尚不及国外. |
| 关 键 词： | GaAs光电阴极 蓝延伸 光电发射 光学结构 |
| 收稿时间： | 4/6/2011 12:00:00 AM |
| 修稿时间： | 6/7/2011 12:00:00 AM |
Comparison between transmission-mode extended blue GaAs photocathodes in optical structure |
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| Zhao Jing,Chang Ben-Kang,Zhang Yi-Jun,Zhang Jun-Ju,Shi Feng,Cheng Hong-Chang and Cui Dong-Xu.Comparison between transmission-mode extended blue GaAs photocathodes in optical structure[J].Acta Physica Sinica,2012,61(3):37803-037803. | |
| Authors: | Zhao Jing Chang Ben-Kang Zhang Yi-Jun Zhang Jun-Ju Shi Feng Cheng Hong-Chang and Cui Dong-Xu |
| Institution: | Institute of Electronic Engineering and Optoelectronic Technology, Nanjing University of Science and Technology, Nanjing 210094, China;Institute of Electronic Engineering and Optoelectronic Technology, Nanjing University of Science and Technology, Nanjing 210094, China;Institute of Electronic Engineering and Optoelectronic Technology, Nanjing University of Science and Technology, Nanjing 210094, China;Institute of Electronic Engineering and Optoelectronic Technology, Nanjing University of Science and Technology, Nanjing 210094, China;Science and Technology on Low-Light-Level Night Vision Laboratory, Xi'an 710065, China;Science and Technology on Low-Light-Level Night Vision Laboratory, Xi'an 710065, China;Xi'an Institute of Applied Optics, Xi'an 710065, China |
| Abstract: | One transmission-mode extended blue GaAs photocathode is prepared by MOCVD , whose integral sensitivity is 1980 μA/lm. Its spectral curve is compared with the spectral curve of ITT photocathode for analyzing optical structure. The comparison indicates that the differences lie in the thickness and the Al mole value of the Ga1-xAlx As window layer, electron diffusion length, and back-interface recombination velocity, which make the photocathode in this experiment inferior to that of ITT in extended blue performance. However our surface electron-escape probability and the thickness of the GaAs active layer are in accordance with those of ITT, which leads their difference in the long waveband part to be less than in the short one. In addition, our absorptivity in the whole response waveband is smaller than that of ITT photocathode, which leads the spectral response and integral sensitivity of the domestic transmission-mode extended blue GaAs photocathode to be inferior to the exotic one. |
| Keywords: | GaAs photocathode extended blue photoelectric emission optical structure |
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