Effect of halide ion concentration and irradiation dose dependent photostimulated luminescence investigation in the image screen phosphor CsBr1-xClx:Euy
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| Authors: | N G Subramaniam S S Pandian T W Kang |
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| Institution: | (1) Solid State & Radiation Physics Laboratory, Department of Physics, Bharathiar University, Coimbatore, 641 046, India;(2) Quantum Functional Semiconductor Research Center, Dongguk University, 26 3Ga, Pildong, Chung-gu, Seoul, 100715, South Korea |
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| Abstract: | Photoluminescence(PL) characterization is carried out on CsBr1-xClx:Euy2+ (x = 0.05, 0.1, 0.2, 0.3 y = 100 ppm, 200 ppm) crystals grown in vacuum with the Bridgman technique. PL studies show an increase in luminescence intensity with a decrease in bromide ion content. F(Br–) and F(Cl–) centers are formed due to  -ray irradiation at room temperature. Photostimulated luminescence (PSL) emission is found to increase with an increase in irradiation dose from 7.5 Gy to 30 Gy at room temperature. From the results it is demonstrated that out of the different compositions studied, CsBr0.9Cl0.1:Eu2+ (200 ppm) phosphor has a linear PSL response with respect to irradiation dose. |
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| Keywords: | 78 55 – m 78 45 +h 78 55 fv |
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