CuO在高压下的状态方程、电学性质与相变

 在活塞－圆筒式高压装置上研究了CuO在4.5 GPa内的p-V关系，给出了它的状态方程、格临爱森参数γ₀、体积模量B₀以及B₀的压力导数B₀'。在金刚石压砧装置上，采用我们建立的电阻、电容测量方法研究了CuO在22 GPa内电阻、电容与压力的关系。实验结果表明，CuO的电阻和电容在一些压力下都发生了突然的变化。这些变化可能与CuO内部的电子结构和晶界处的结构状态变化有关。

EQUATION OF STATE,ELECTRICAL PROPERTIES AND PHASE TRANSITION IN CuO AT HIGH PRESSURE

The p-V relationship for CuO at room temperature and up to 4.5 GPa has been studied using the piston-cylinder type measurement device, and its equation of state, Grüneisen parameter γ₀, bulk modulus B₀ and the first order pressure derivative B₀' have been given. And the resistance-pressure and capacitance-pressure relationships at room temperature and the pressures up to 22 GPa have been studied in a diamond anvil cell using resistance and capacitance measurements. Experimental results show that several anomalous changes in resistance and capacitance occur. We conjecture that the change at about 5 GPa may be caused by the change of the interior electronic structure (electronic structure transition), and the changes at other pressures may be related to the changes of structures of states in the crystal boundary. These results are valuable to understand the mechanism of superconductivity for the copper-bearing oxide superconductors.