硅二极管I-V特性及二次击穿计算

利用时域有限差分方法 ,求解了一维半导体器件内部载流子所满足的耦合、非线性、刚性偏微分方程组。得出了发生二次击穿的判据应以空穴电离率为准 ,而不是通常认为的以电子电离率为准的结论 ,并构造了一种准确、快捷地计算半导体器件反偏I-V特性曲线的方法。

CALCULATIONS OF I-V CHARACTERISTICS AND SECOND BREAKDOWN OF SILICON DIODE

By means of the FDTD,the non-linear,coupled and stiff partial equations kept by the carriers in the semiconductor devices are worked out numerically.A criterion for second breakdown is obtained,i.e.it is the ionization rate of hole,not the ionization rate of electron which is usually considered,that decides the happening of the second breakdown.Also an accurate and fast method is suggested for calculation of the reverse-biased I-V characteristic curve of the diode.