电化学法涂层导体CeO_2缓冲层外延生长研究

电化学沉积法制备高温超导YBa2Cu3O7-δ涂层导体缓冲层具有工艺简单、设备要求低、易于连续化批量制备等优点。采用电化学沉积法,在双轴织构的Ni-5at.%W(Ni-5W)金属基带上成功制备出了具有良好c轴取向的CeO2缓冲层薄膜。利用X射线衍射、极图、扫描电子显微镜和原子力显微镜等对上述氧化物薄膜的织构、表面形貌等进行表征。重点研究了薄膜厚度、退火温度、退火时间等工艺对薄膜外延生长及其表面形貌的影响,结果表明:电化学沉积方法制备的CeO2缓冲层具有很好的双轴织构、表面平整、均一,粗糙度低,表现出良好的缓冲层性质。结合金属有机化学溶液超导层的制备技术,本工作展示了一条全化学法制备第二代高温超导带材的技术路线,具有很好的应用前景。

Preparation of the CeO2 buffer layers for high-temperature superconducting coated conductors by electrodeposition

Electro-deposition technique(ED) is a simplify and low cost technique which is easy to realize the reel-to-reel preparation of YBa2Cu3O7-δcoated conductor buffer layers.In the present work,CeO2 buffer layers were epitaxially grown on(00l) Ni–5W biaxially textured substrates using electro-deposition technique.The texture and surface topography of buffer films were characterized by X-ray diffraction(XRD),pole figure,scanning electron microscope(SEM) and atomic force microscope(AFM).The CeO2 buffer layers show well bi-axial texture and low surface roughness with FHWM value and RMS about 5.2°and 2 nm,respectively,a improvement compare to Ni-5W substrates,which is suitable for subsequent buffer layers and YBCO films epitaxial grown.