Change in the nature of the Ni diffusion mechanism on the Si(111) surface with adsorption of Co atoms |
| |
| Authors: | A E Dolbak B Z Ol’shanetskii S A Tiis R A Zhachuk |
| |
| Institution: | (1) Institute of Semiconductor Physics, Siberian Branch of the, Russian Academy of Sciences, 630090 Novosibirsk, Russia |
| |
| Abstract: | The diffusion of Ni on a Si (111) surface is investigated by LEED and Auger electron spectroscopy. It is found that, in contrast
to the process on the initially clean Si (111)−7×7 surface, on Si (111) surfaces with submonolayer Co coverages the nature
of the Ni transport mechanism changes at a temperature of about 750 °C, and the Ni surface diffusion coefficients increase
sharply below this temperature.
Pis’ma Zh. éksp. Teor. Fiz. 66, No. 9, 611–614 (10 November 1997) |
| |
| Keywords: | |
| 本文献已被 SpringerLink 等数据库收录！ |
|
