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Light-emitting Si: Er structures prepared by molecular-beam epitaxy: Structural defects |
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| Authors: | V I Vdovin P Verner N D Zakharov D V Denisov N A Sobolev V M Ustinov |
| Institution: | (1) Institute for Chemical Problems of Microelectronics, B. Tolmachevskii per. 5, Moscow, 109017, Russia;(2) Max Planck Institute of Physics of Microstructures, Halle/Saale, Germany;(3) Ioffe Physicotechnical Institute, Russian Academy of Sciences, Politekhnicheskaya ul. 26, St. Petersburg, 194021, Russia |
| Abstract: | The structural defects in silicon layers grown by molecular-beam epitaxy and doped with erbium up to concentrations Er] = 4 × 1019 cm?3 are studied using transmission electron microscopy and high-resolution electron microscopy. It is established that the main types of extended structural defects at erbium concentrations Er] ≥ 2 × 1019 cm?3 are 4-to 25-nm Er spherical precipitates located at the “epitaxial layer-substrate” boundary and platelike ErSi2 precipitates residing in the { 111} planes throughout the thickness of the layer. |
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