Diffusional relaxation in ZnS after thermal doping at 800°C |
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Authors: | Yu Yu Bacherikov and S V Optasyuk |
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Institution: | (1) Department of Materials Science and Engineering, Ibaraki University, Hitachi 316-8511, Japan;(2) Present address: Material Testing and Analysis Department, Sumitomo Metal Technology, Inc., Ibaraki 314-0014, Japan;; |
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Abstract: | Photoluminescence spectra of powdered ZnS thermally doped with MnS are studied. Correlations are demonstrated between variations
in the luminescence characteristics of ZnS:Mn, on one hand, and some features of radiation center formation and the diffusion
of Mn in ZnS after processing, on the other. It is found that after manganese doping at a temperature (T = 800°C) lower than
the phase transition temperature of ZnS, relaxation processes owing to diffusion of Mn in ZnS take place in the material over
times as long as 6.103 h. It is shown that 6.103 h after doping the α-MnS phase is essentially completely dissolved in the volume of the ZnS. Diffusion of Mn in powdered
ZnS is found to occur via several channels, rapid diffusion along interior boundaries and slow diffusion via interstitial
space, which indicates the existence of different activation energies for diffusion of Mn depending on its localization within
the ZnS lattice. |
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Keywords: | |
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