Raman spectra of MgB2 at high pressure and topological electronic transition |
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Authors: | K. P. Meletov M. P. Kulakov N. N. Kolesnikov J. Arvanitidis G. A. Kourouklis |
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Affiliation: | (1) Institute of Solid-State Physics, Russian Academy of Sciences, Chernogolovka, Moscow region, 142432, Russia;(2) Physics Division, School of Technology, Aristotle University of Thessaloniki, GR-540 06 Thessaloniki, Greece |
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Abstract: | Raman spectra of MgB2 ceramic samples were measured as a function of pressure up to 32 GPa at room temperature. The spectrum at normal conditions contains a very broad peak at ∼590 cm−1 related to the E 2g phonon mode. The frequency of this mode exhibits a strong linear dependence in the pressure region from 5 to 18 GPa, whereas, beyond this region, the slope of the pressure-induced frequency shift is reduced by about a factor of two. The pressure dependence of the phonon mode up to ∼5 GPa exhibits a change in the slope, as well as a “hysteresis” effect in the frequency vs. pressure behavior. These singularities in the E 2g mode behavior under pressure support the suggestion that MgB2 may undergo a pressure-induced topological electronic transition. |
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