| 1.2kV SiC MOSFET器件URS应力退化机理研究 |
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| 引用本文： | 黄宇,刘斯扬,顾春德,马荣晶,孙伟锋.1.2kV SiC MOSFET器件URS应力退化机理研究[J].电子学报,2016,44(1):130-134. |
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| 作者姓名： | 黄宇 刘斯扬 顾春德 马荣晶 孙伟锋 |
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| 作者单位： | 东南大学国家ASIC工程中心, 江苏南京 210096 |
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| 基金项目： | 国家自然科学基金(61306092;61204083)，江苏省自然科学基金(BK20130021)，东南大学研究生院科研基金(YBPY1403) |
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| 摘 要： | 本文首次研究了1.2kV碳化硅(Silicon Carbide,SiC)MOSFET在非钳位重复应力(Unclamped Repetitive Stress,URS)应力下的退化现象,并通过软件仿真和电荷泵测试技术对该现象进行了深入的分析.研究结果表明:URS应力会使得器件积累区由于碰撞电离产生大量的电子空穴对,其中的热空穴将在电场的作用下注入到氧化层中,使氧化层中出现许多空间正电荷,这些空间正电荷的存在使得器件的导通电阻与阈值电压出现下降,关态漏电流出现上升.
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| 关 键 词： | 碳化硅 功率MOSFET 非钳位重复应力 退化 |
| 收稿时间： | 2014-04-11 |
The Degradation Mechanism for 1.2kV SiC MOSFET Under Unclamped Repetitive Stress |
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| HUANG Yu,LIU Si-yang,GU Chun-de,MA Rong-jing,SUN Wei-feng.The Degradation Mechanism for 1.2kV SiC MOSFET Under Unclamped Repetitive Stress[J].Acta Electronica Sinica,2016,44(1):130-134. |
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| Authors: | HUANG Yu LIU Si-yang GU Chun-de MA Rong-jing SUN Wei-feng |
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| Institution: | National ASIC System Engineering Technology Research Center, Southeast University, Nanjing, Jiangsu 210096, China |
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| Abstract: | The degradation behavior for 1.2kV Silicon Carbide (SiC) MOSFET under unclamped repetitive stress (URS) has been firstly investigated in detail by the analysis of two-dimensional device simulations and charge pumping measurements.It has been shown that, when the device is under URS condition, the electric field and impact ionization in the accumulation region become sufficiently large, so as to generate numerous hot holes.These avalanched-generated hot holes will be injected and trapped into the gate oxide above the accumulation region, resulting in an initial decrease of the on-state resistance and threshold voltage, as well as an increase in drain-source leakage current. |
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| Keywords: | silicon carbide power MOSFET URS (unclamped repetitive stress) degradation |
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