Anisotropic behaviour of the magnetoresistance in single crystalline iron films |
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| Institution: | 1. Department of Materials Science, Uppsala University, Box 534, S-751 21 Uppsala, Sweden;2. Department of Physics, Uppsala University, S-751 21 Uppsala, Sweden;1. Benemérita Universidad Autónoma de Puebla, Mexico;2. Centro Atómico Bariloche/Instituto Balseiro (CNEA/CONICET/UnCuyo), Argentina;3. Comisión Nacional de Investigación y Desarrollo Aeroespacial, Peru;4. Escuela Politécnica Nacional, Ecuador;5. Escuela Superior Politécnica de Chimborazo, Ecuador;6. Instituto Antártico Argentina, Dirección Nacional del Antártico, Argentina;7. Instituto de Astronomía y Física del Espacio, IAFE (UBA-CONICET), Argentina;8. Instituto Nacional de Astrofísica, Óptica y Electrónica, Mexico;9. Universidad Autónoma de Chiapas, UNACH, Mexico;10. Universidad Central de Venezuela, Venezuela;11. Universidad de Los Andes, ULA, Venezuela;12. Universidad de Nariño, Colombia;13. Universidad de San Carlos, Guatemala;14. Universidad Industrial de Santander, Colombia;15. Universidad Mayor de San Andrés, Bolivia;p. Universidad Michoacana de San Nicolás de Hidalgo, Mexico;q. Universidad Politécnica de Pachuca, Mexico;r. Universidad San Antonio Abad del Cusco, Peru;s. Universidad San Francisco de Quito, Ecuador;t. Universidad Simón Bolivar, Venezuela;u. Universidade Estadual de Campinas, Brazil;v. Universidade Federal de Campina Grande, Brazil;w. Centro de Investigaciones Energéticas Medioambientales y Tecnológicas, Spain;x. Departamento de Ciencias de la Atmósfera y los Océanos, Facultad de Ciencias Exactas y Naturales, Universidad de Buenos Aires, Argentina;y. Departamento de Física, Facultad de Ciencias Exactas y Naturales, Universidad de Buenos Aires, Argentina;z. Instituto Geofísico del Perú (IGP), Peru;1. Centre for High Energy Physics, University of the Punjab, Lahore 54560, Pakistan;2. Nanomaterials Research Group, Physics Division PINSTECH, Nilore 45650, Islamabad, Pakistan;3. Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China;4. Centre of Excellence in Solid State physics, University of the Punjab, Lahore 54560, Pakistan;5. Department of Physics and Astronomy, Ball State University, Muncie, IN 47306, USA;1. Shenzhen Key Laboratory of Intelligent Robotics and Flexible Manufacturing Systems, Southern University of Science and Technology, China;2. Department of Mechanical and Energy Engineering, Southern University of Science and Technology, China;3. School of Design, Southern University of Science and Technology, China;1. REQUIMTE, Chemical Science Department, Faculty of Pharmacy, University of Oporto, Rua Jorge Viterbo Ferreira, 4050-313 OPorto, Portugal;2. Vienna University of Technology, Institute of Applied and Synthetic Chemistry, Getreidemarkt 9/163, A-1060 Vienna, Austria |
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| Abstract: | Magnetoresistive properties of single crystalline Fe(0 0 1) films with thickness in the range 5–100 nm are reported. The films possess low coercive fields (∼100 A/m) but a weak irreversible behaviour of the magnetization remains to fields of the order of the anisotropy field. The anisotropic behaviour of the magnetoresistance is investigated as a function of temperature and film thickness. A reversal in sign of the anisotropic magnetoresistance from negative to positive values is found at low temperatures on decreasing the film thickness from 100 to 5 nm, or by increasing the temperature from 10 to 300 K of a sufficiently thick film. The reversal in sign is associated with a crossover from Lorentz force (ordinary) to spin–orbit (extraordinary) dominated scattering processes governing the anisotropic magnetoresistance as the length scale of the electron mean free path, λ, decreases. |
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