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Effect of a static magnetic field on silicon transport in liquid phase diffusion growth of SiGe
Authors:N. Armour  S. Dost
Abstract:Liquid phase diffusion experiments have been performed without and with the application of a 0.4 T static magnetic field using a three‐zone DC furnace system. SiGe crystals were grown from the germanium side for a period of 72 h. Experiments have led to the growth of single crystal sections varying from 0 to 10 mm thicknesses. Examination of the processed samples (single and polycrystalline sections) has shown that the effect of the applied static magnetic field is significant. It alters the temperature distribution in the system, reduces mass transport in the melt, and leads to a much lower growth rate. The initial curved growth interface was slightly flattened under the effect of magnetic field. There were no growth striations in the single crystal sections of the samples. (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
Keywords:diffusion  convection  magnetic fields  single crystal growth  germanium silicon alloys
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