首页 | 本学科首页   官方微博 | 高级检索  
     


Influence of SiO32‐ impurity on growth habit of potassium dihydrogen phosphate crystal
Authors:Jianxu Ding  Yongqiang Lu  Shenglai Wang  Xiaoming Mu  Qingtian Gu  Zhengping Wang  Yun Sun  Xiaoling Liang  Xinguang Xu  Xun Sun  Wenjie Liu  Guangxia Liu  Shengjun Zhu
Abstract:By altering the concentration of silicate (SiO32‐) impurity in the solution, a series of potassium dihydrogen phosphate (KDP) crystals was obtained by the conventional temperature cooling and the rapid growth methods, respectively. It was observed that the presence of SiO32‐ made KDP crystals tapering in conventional cooling method, while more SiO32‐ induced inclusions at prismatic sectors in the rapid growth method. Laser‐polarization‐interference results showed that SiO32‐ extended the dead zone and reduced the growth rate of (100) face of KDP crystals. The negative influence of SiO32‐on the growth was considered absolutely similar to the effect of cations. It was also suggested that the stability of solution doped with SiO32‐ was improved without seed crystals, while it was destructed with seed crystals. The inhibition mechanism was analyzed in terms of SiO32‐ absorption on (100) face. (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
Keywords:growth from solutions  KDP  absorption  impurities
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号