Studies of the structure of defects in In4Se3 crystals by small-angle neutron scattering |
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| Authors: | V M Garamus A Kh Islamov Ya P Pilat V P Savchin |
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| Institution: | (1) Joint Institute for Nuclear Research, 141980 Dubna, Moscow Region, Moscow;(2) I. Ya. Franko State University, 290000 Lvov, Ukraine |
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| Abstract: | Small-angle neutron scattering is used to study the layered semiconductor In4Se3. It is observed that the samples contain inhomogeneities of colloidal dimensions, which are attributed to the precipitation of indium. Annealing reduces the concentration of inhomogeneities. Modeling the system using an ensemble of primary spherical inhomogeneities showed that a single cluster of a rectangular superlattice (2-2-6) contains 24 primary inhomogeneities of radius 13.5±1,5 Å and the distance between them is 70.9±1.5 Å. |
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